Micron's next NAND, G11, will have more than 400 layers and ramp in late 2027

Micron has announced G11, its next generation of 3D NAND flash, at a technology webinar for investors on 21 October. It skips the generation that would have come after today's 276-layer G9.

Micron's slides say G11 will have more than 400 layers and use wafer-on-wafer bonding, with about twice G9's bit density, up to 1.5 times the I/O speed and over 25% less energy per bit transferred. Volume production is due in the second half of 2027.

Micron hasn't given an exact layer count or named any SSDs that will use G11. Chief technology and products officer Scott DeBoer said more details will come next year, closer to launch, according to Blocks & Files.